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Press Room
Cree to Demonstrate New GaN HEMT Power Amplifier & Switch Products
Microwave engineers can preview latest packaged GaN MMIC products at MTT-S
DURHAM, N.C., May 20, 2010 — Providing RF and microwave design engineers with the opportunity to see firsthand the latest developments in GaN MMIC technology, Cree, Inc. (NASDAQ: CREE) today announced plans to demonstrate a variety of new GaN HEMT RF packaged amplifier and switch products at the IEEE MTT-S International Microwave Symposium (Booth #836) to be held in the Anaheim Convention Center May 25 through May 27, 2010. The products to be demonstrated include a SPDT MMIC switch (300 MHz to 3 GHz); a 25 W MMIC power amplifier (10 MHz to 6 GHz); a 75 W MMIC power amplifier (2.7 to 3.5 GHz); and a 240 W transistor (2.9 to 3.5 GHz).
“We are pleased to preview our new packaged products, targeted for release later this year. We have been actively expanding our GaN MMIC and high power discrete product lines over the last twelve months to include higher power, higher efficiency amplifiers, as well as the recent introduction of high dynamic range GaN switch and our low noise amplifier (LNA) MMIC products, which we believe can further extend the advantages of GaN for commercial and military systems,” explained Jim Milligan, Cree, director of RF & Microwave Products.
“These product demonstrations are designed to show the benefits of Cree GaN to hardware design engineers seeking ways to improve system level output power, bandwidth and dynamic range beyond what can be achieved with traditional GaAs or silicon LDMOS solutions. They will also have access to our product development engineers to answer questions regarding specific implementation and advantages of these next generation products,” Milligan added.
GaN Packaged Product Demonstrations at MTT-S:
SPDT MMIC Switch (0.3 to 3 GHz): Cree’s CMSA30025S is the first GaN MMIC SPDT switch to operate over the 300 MHz to 3 GHz range with less than 0.7 dB insertion loss, 30 dB isolation and less than 20 nec switching speed. The RF power handling capability of this switch is 25 watts CW at only 0.1 dB compression with an output intercept point higher than 60dBm. The demonstration will show the QFN version of the switch in a test fixture with driver under “hot switching” conditions. Engineers will be able to observe its small size, low power consumption and its ability to be incorporated into a circuit with few additional components, unlike conventional PIN diode switches.
25 Watt MMIC PA (10 MHz to 6 GHz): Cree’s CMPA0060025F is a packaged GaN MMIC power amplifier operating from below 10 MHz up to 6 GHz with typical saturated output power of greater than 25 watts CW and power gain of 12 dB. This distributed amplifier has typical drain efficiencies of 40% and is packaged within a 0.5 inch square footprint. The amplifier will be demonstrated in an evaluation fixture that is available for customer measurements.
75 Watt MMIC PA (2.7 to 3.5 GHz): Cree’s CMPA2735075F is the first of a family of radar-centric packaged MMIC power amplifiers. Demonstrated in its evaluation fixture, this amplifier provides 75 watts of pulsed RF power (pulse widths of 300 microseconds typical at 10% duty cycle) with an accompanying power gain of 20 dB over the 2.7 to 3.5 GHz frequency range. This 50 ohm (in/out) matched MMIC typically provides 55% power added efficiency (PAE). The device is housed in a small, 0.5 inch square package and exhibits superior amplitude and phase droop characteristics.
240 Watt Transistor (2.9 to 3.5 GHz): Moving up in power level, Cree’s CGH35240F is a fully internally matched, 50 ohm power transistor employing Cree’s GaN on SiC technology for excellent thermal management and reliability. The packaged transistor, measuring 0.70 by 0.95 inches, provides a saturated output power of greater than 220 watts with accompanying power gain of greater than 11 dB over the 2.9 to 3.5 GHz frequency range with typical PAE of 60%. This device will be demonstrated in an evaluation fixture that is available for customer measurements in typical radar applications.
About Cree
Cree is a market-leading innovator of semiconductor solutions for wireless and power applications, lighting-class LEDs, and LED lighting solutions.
Cree’s product families include power-switching devices and radio-frequency/wireless devices, blue and green LED chips, high-brightness LEDs, lighting-class power LEDs, and LED fixtures and bulbs. Cree solutions are driving improvements in applications such as variable-speed motors, wireless communications, general illumination, backlighting and electronic signs and signals.
For additional product and company information, please refer to www.cree.com
This press release contains forward-looking statements involving risks and uncertainties, both known and unknown, that may cause actual results to differ materially from those indicated. Actual results may differ materially due to a number of factors, including the risk we may be unable to develop and release commercial products with performance ratings comparable to the development results described above; the risk we may be unable to manufacture the products with sufficiently low cost to offer them at competitive prices or with acceptable margins; the potential lack of customer acceptance of the products; customer acceptance of LED products; the rapid development of new technology and competing products that may impair demand or render Cree’s products obsolete; and other factors discussed in Cree’s filings with the Securities and Exchange Commission, including its report on Form 10-K for the year ended June 28, 2009, and subsequent filings.
Cree is a registered trademark of Cree, Inc.
Media Contact:
Michelle Murray
Cree, Inc.
Corporate Communications
(919) 313-5505
michelle_murray@cree.com
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